Transforming Non-Magnetic Phosphorene into a Spintronics Contender

Phosphorene, a two-dimensional material comprising a single layer of phosphorus, typically lacks magnetism, which limits its utility in advanced electronics. However, a new study using first-principles calculations demonstrates that introducing specific transition metals can radically alter its physical behaviour. By doping phosphorene with elements such as titanium, vanadium, chromium, manganese, and iron, researchers successfully induced magnetic moments in the material.

The modelling showed varied results: chromium and manganese created ferromagnetic states, acting like standard magnets with high critical temperatures. Conversely, titanium, vanadium, and iron favoured antiferromagnetic ordering. Most significantly, the iron (Fe) and vanadium (V) doped systems exhibited 'unconventional compensated magnetism'. This rare state combines the zero net magnetisation of antiferromagnets with the spin-split electronic structure usually reserved for ferromagnets. The study identifies the Fe-doped system as a quasi-altermagnetic material and the V-doped system as a Luttinger compensated magnetic semiconductor.

These unique properties allow for effective spin transport—using electron spin to carry information—without unwanted magnetic coupling. Consequently, these doped phosphorene monolayers are highlighted as superior candidates for next-generation 2D spintronics.